DocumentCode
267441
Title
Advantage of super junction MOSFET for power supply application
Author
Song Chen ; Danyi Xiang ; Haining Wang ; Tabira, Keisuke ; Niimura, Yasushi
Author_Institution
Applic. Eng. Dept., Fuji Electr. (China) Co., Ltd., Shanghai, China
fYear
2014
fDate
5-8 Nov. 2014
Firstpage
1388
Lastpage
1392
Abstract
Characteristics of fast recovery diode (FRED) type super junction MOSFET (SJ-MOS) are reported. The reverse recovery ruggedness (-di/dt ruggedness) of the SJ-MOS FRED is dramatically improved compared to that of non-FRED type, which is almost 16 times better.
Keywords
power MOSFET; power semiconductor diodes; power supplies to apparatus; FRED-type SJ-MOS; fast recovery diode-type superjunction MOSFET; nonFRED type; power supply application; reverse recovery ruggedness; Junctions; Logic gates; MOSFET; Power supplies; Resonant frequency; Schottky diodes; Switches; Fast recovery diode type; Super junction MOSFET; power supply efficiency; reverse recovery ruggedness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location
Shanghai
Type
conf
DOI
10.1109/PEAC.2014.7038067
Filename
7038067
Link To Document