• DocumentCode
    267442
  • Title

    T-type IGBT module with new voltage class authentic RB-IGBT for DC-1000V solar inverter application

  • Author

    Xiang, Danyi ; Kakefu, Mitsuhiro ; Mutsumi, Sawada ; Otsuki, Masahito

  • Author_Institution
    Applic. Eng. Dept., Fuji Electr. (China) Co. Ltd., Shanghai, China
  • fYear
    2014
  • fDate
    5-8 Nov. 2014
  • Firstpage
    1393
  • Lastpage
    1396
  • Abstract
    This paper describes newly developed T-type full-leg IGBT modules, specifically designed for mega-solar inverter application of higher DC-input voltage, such as DC 1000V input. The newly developed 900V voltage class authentic RB-IGBTs are installed in the power module, which have significant advantages in switching performance when compared to the alternative method 1200V standard IGBT and reverse blocking diode cascade. The 1200V-900A full-T-leg high power IGBT module demonstrations will be discussed.
  • Keywords
    insulated gate bipolar transistors; invertors; solar power; T-type full-leg high power IGBT modules; current 900 A; higher DC-input voltage; megasolar inverter application; reverse blocking diode cascade; switching performance; voltage 1000 V; voltage 1200 V; voltage 900 V; voltage class authentic RB-IGBT; Insulated gate bipolar transistors; Pulse width modulation; Switches; RB-IGBT; Solar Inverter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Application Conference and Exposition (PEAC), 2014 International
  • Conference_Location
    Shanghai
  • Type

    conf

  • DOI
    10.1109/PEAC.2014.7038068
  • Filename
    7038068