DocumentCode :
2674653
Title :
Evaluation of 10 kV, 80 kA Si SGTO Switching Components for Army Pulsed Power Applications
Author :
Crowley, T. ; O´Brien, H. ; Shaheen, W.
Author_Institution :
Army Res. Lab., Berkeley Res. Associates, Adelphi, MD
fYear :
2006
fDate :
14-18 May 2006
Firstpage :
240
Lastpage :
243
Abstract :
The U.S. Army Research Lab (ARL) is investigating the switching capabilities of advanced silicon devices for high current pulsed power applications. These solid state switches are intended to replace more traditional vacuum switches. The benefits of these switches are higher dl/dt, peak power levels and current densities, increased reliability and lifetime, and smaller switch volume. The peak current achieved by the device was 83.3 kA, with a 10% to 90% rise time of 3.5 mus while a 0.263 MA2s without failure. The peak power of the device during this test shot was 78.7 MW. ARL is collaborating with Silicon Power Corp. (SPCO) to evaluate super-GTO performance and improve upon switch/buss bar packaging for pulsed power applications
Keywords :
busbars; current density; military avionics; power semiconductor switches; pulsed power switches; semiconductor device testing; silicon; thyristors; 3.5 mus; 78.7 MW; 83.3 kA; ARL; SPCO; Silicon Power Corporation; U.S. Army Research Lab; advanced silicon devices; current densities; high current pulsed power applications; reliability; solid state switches; super-GTO performance; switch-buss bar packaging; switching capabilities; switching components; Capacitors; Cathodes; Driver circuits; Milling machines; Monitoring; Optical switches; Powders; Pulse circuits; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 2006. Conference Record of the 2006 Twenty-Seventh International
Conference_Location :
Arlington, VA
Print_ISBN :
1-4244-0018-X
Electronic_ISBN :
1-4244-0019-8
Type :
conf
DOI :
10.1109/MODSYM.2006.365227
Filename :
4216179
Link To Document :
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