Title :
Millimetre Wave Low Noise E-Plane Balanced Mixers Incorporating Planar MBE GaAs Mixer Diodes
Author :
Bates, R.N. ; Surridge, R.K. ; Summers, J.G.
Abstract :
Planar GaAs Mott mixer diodes have been made for use in novel E-plane balanced mixers at 35 and 85 GHz. Single sideband noise figures of 6 dB at 35 GHz and 7.5 dB at 85 GHz (including 1 dB I.F. contribution) have been achieved. Both devices and circuits are suitable for low cost, high volume applications.
Keywords :
Bonding; Circuits; Costs; Finline; Frequency; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Schottky diodes; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130592
