L-Band Si Power V-FET

A new structure Si vertical channel FET ---- the covered gate structure has been developed. Compared with the buried gate structure, an increasing power gain by more than 5 dB has been obtained . L-band devices with output power higher than 10W, power gain 6 dB at 1GHz have been fabricated. The relationship between the electrical properties and devices structure parameters are discussed. The excellent temperature performance and other characteristics are reported.