DocumentCode :
2675184
Title :
Extended interaction sources above 220 GHz
Author :
Dobbs, Richard ; Steer, Brian
Author_Institution :
Commun. & Power Ind. Canada, Inc., Georgetown, ON, Canada
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. CPI Canada have produced EIKs and EIOs at frequencies up to 220 GHz. Recent development programs have demonstrated that the technology exists to design and build Extended Interaction devices at low THz frequencies. This paper describes current and predicted performance of these devices, the design challenges and solutions to enable this performance.
Keywords :
klystrons; network synthesis; submillimetre wave oscillators; EIK; EIO; extended interaction device; extended interaction klystron; extended interaction oscillator; extended interaction source; low THz frequency; Cavity resonators; Electron beams; Fabrication; Focusing; Klystrons; Performance evaluation; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6105059
Filename :
6105059
Link To Document :
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