• DocumentCode
    2675377
  • Title

    6.2 GHz digital CMOS circuits in thin SIMOX films

  • Author

    Celler, G.K. ; Kamgar, Avid ; Cong, H.-I. ; Field, R.L. ; Hillenius, S.J. ; Lindenberger, W.S. ; Trimble, L.E. ; Sturm, J.C.

  • Author_Institution
    AT&T Bell Lab., Murray Hill, NJ, USA
  • fYear
    1989
  • fDate
    3-5 Oct 1989
  • Firstpage
    139
  • Lastpage
    140
  • Abstract
    Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors
  • Keywords
    CMOS integrated circuits; digital integrated circuits; integrated circuit technology; scaling circuits; semiconductor-insulator boundaries; 6.2 GHz; CMOS dual-modulus prescaler circuits; SOI structure; Si-SiO2; characteristics optimisation; digital CMOS circuit; intrinsic properties; symmetric CMOS technology; very thin SIMOX films; Annealing; CMOS digital integrated circuits; CMOS technology; Counting circuits; Frequency; Optical feedback; Oxidation; Semiconductor films; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1989., 1989 IEEE
  • Conference_Location
    Stateline, NV
  • Type

    conf

  • DOI
    10.1109/SOI.1989.69804
  • Filename
    69804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675377