Title :
6.2 GHz digital CMOS circuits in thin SIMOX films
Author :
Celler, G.K. ; Kamgar, Avid ; Cong, H.-I. ; Field, R.L. ; Hillenius, S.J. ; Lindenberger, W.S. ; Trimble, L.E. ; Sturm, J.C.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors
Keywords :
CMOS integrated circuits; digital integrated circuits; integrated circuit technology; scaling circuits; semiconductor-insulator boundaries; 6.2 GHz; CMOS dual-modulus prescaler circuits; SOI structure; Si-SiO2; characteristics optimisation; digital CMOS circuit; intrinsic properties; symmetric CMOS technology; very thin SIMOX films; Annealing; CMOS digital integrated circuits; CMOS technology; Counting circuits; Frequency; Optical feedback; Oxidation; Semiconductor films; Substrates; Temperature;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69804
