Title :
Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices
Author :
Reisinger, Axel R. ; Adams, Stephen B. ; Immorlica, Anthony A.
Author_Institution :
Lockheed Sanders Avionics, Nashua, NH, USA
Abstract :
The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; hydrogen; semiconductor device reliability; GaAs; GaAs semiconductor component; H2; P-HEMT device; hermetic cavity; high-temperature manufacturing; hydrogen outgassing; reliability; Bidirectional control; Degradation; Gallium arsenide; Hydrogen; Manufacturing processes; Packaging; Raw materials; Semiconductor device reliability; Semiconductor materials; Testing;
Conference_Titel :
GaAs Reliability Workshop, 1997., Proceedings
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7908-0064-0
DOI :
10.1109/GAASRW.1997.656134
