Title :
Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate
Author :
Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Toropov, Alexander I.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
Abstract :
Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution.
Keywords :
III-V semiconductors; drops; gallium arsenide; indium compounds; molecular beam epitaxial growth; red shift; semiconductor growth; semiconductor quantum dots; GaAs; InAs-GaAs; Stranski-Krastanov method; deposition technique; droplet epitaxy; gallium arsenide (001) substrate; molecular beam epitaxy; optimal growth; quantum dot kinetic curve; red-shift; spectral analysis; transient process; Atomic layer deposition; Epitaxial growth; Gallium arsenide; Indium; Kinetic theory; Nanostructures; Quantum computing; Quantum dots; Substrates; Surface morphology; Quantum dot; droplet epitaxy; growth interruption; kinetic curve;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173921
