Title :
Two-stage nucleation of indium droplets on GaAs (001) substrate
Author :
Lyamkina, Anna A. ; Galitsyn, Yuri G. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Toropov, Alexander I.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
Abstract :
The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5ldr107 cm-2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.
Keywords :
III-V semiconductors; drops; epitaxial layers; evaporation; gallium arsenide; indium; molecular beam epitaxial growth; nucleation; semiconductor quantum dots; GaAs; GaAs (001) substrate; In; arsenic evaporation; bimodal character; drop density; indium droplet epitaxy; molecular beam epitaxial growth; nucleation; quantum dots; surface defects; Atomic force microscopy; Epitaxial growth; Gallium arsenide; Image analysis; Indium; Information analysis; Quantum dots; Statistical distributions; Substrates; Surface morphology; Nucleation; epitaxy; quantum dots;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173922
