Title :
The optimal conditions of obtaining AlN-layers on sapphire with MBE method
Author :
Malin, Timur V. ; Zhuravlev, Konstantin S. ; Mansurov, Vladimir G.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; molecular beam epitaxial growth; nitridation; sapphire; semiconductor epitaxial layers; semiconductor growth; thermal stability; wide band gap semiconductors; Al2O3; AlN-Al2O3; MBE method; discharge electric fields; high thermal stability; nitridization; polarization effects; radiation stability; sapphire substrate; semiconductor growth; semiconductor layers; Gallium nitride; Molecular beam epitaxial growth; Optical devices; Optical materials; Optical polarization; Optical surface waves; Physics; Seminars; Substrates; Thermal stability; AlN; Sapphire; nitridization;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173923
