• DocumentCode
    2675434
  • Title

    The optimal conditions of obtaining AlN-layers on sapphire with MBE method

  • Author

    Malin, Timur V. ; Zhuravlev, Konstantin S. ; Mansurov, Vladimir G.

  • Author_Institution
    Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
  • fYear
    2009
  • fDate
    1-6 July 2009
  • Firstpage
    43
  • Lastpage
    43
  • Abstract
    In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.
  • Keywords
    III-V semiconductors; aluminium compounds; epitaxial growth; molecular beam epitaxial growth; nitridation; sapphire; semiconductor epitaxial layers; semiconductor growth; thermal stability; wide band gap semiconductors; Al2O3; AlN-Al2O3; MBE method; discharge electric fields; high thermal stability; nitridization; polarization effects; radiation stability; sapphire substrate; semiconductor growth; semiconductor layers; Gallium nitride; Molecular beam epitaxial growth; Optical devices; Optical materials; Optical polarization; Optical surface waves; Physics; Seminars; Substrates; Thermal stability; AlN; Sapphire; nitridization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-4571-4
  • Type

    conf

  • DOI
    10.1109/EDM.2009.5173923
  • Filename
    5173923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675434