Title :
Modeling of through diffusion profile in the volume of silicon substrate
Author :
Perov, Gennady V. ; Kusnetsov, Dmitry O.
Author_Institution :
Siberian State Univ. of Telecommun. & Inf., Novosibirsk, Russia
Abstract :
1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.
Keywords :
diffusion; elemental semiconductors; segregation; semiconductor doping; silicon; 1-D model; Si; diffusion; doping; segregation; silicon substrate; Doping profiles; Informatics; Semiconductor device doping; Semiconductor process modeling; Seminars; Silicon; Software performance; Substrates; Temperature distribution; Transmission line matrix methods; Silicon; model of diffusion of substance; substrate;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173925
