Formation of GaAs-Ge heterointerface in the presence of oxide

Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect.