DocumentCode :
2675613
Title :
Pulsed Characterization Of X-band GaAs DDR INPATT Diodes
Author :
Harris, M. ; Laton, R. ; Wagner, L.
fYear :
1982
fDate :
15-17 June 1982
Firstpage :
146
Lastpage :
148
Abstract :
A method, and the resulting data, for measurement of transient impedance behavior of pulsed X-band GaAs IMPATT diodes is described.
Keywords :
Diodes; Fixtures; Gallium arsenide; Impedance measurement; Phase measurement; Power measurement; Pulse amplifiers; Pulse measurements; Radio frequency; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1982.1130641
Filename :
1130641
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2675613
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