Title :
S-Band GaAs Power FET
Author :
Macksey, H.M. ; Tserng, H.Q. ; Westphal, G.H.
Abstract :
The design, fabrication, and performance of an S-band GaAs power FET are described. A pulsed 38.4 mm gate width device has produced up to 20 W with 8 dB gain across the 3 to 3.5 GHz band.
Keywords :
Bonding; FETs; Fabrication; Fingers; Gain; Gallium arsenide; Inductance; Laboratories; Phased arrays; Pulse amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130643
