• DocumentCode
    2675661
  • Title

    Internally Matched (IM) Plated Source Bridge (PSB) Power GaAs FET Achieving A High Performance Power Amplifier In X-band

  • Author

    Igi, S. ; Kobiki, M. ; Sakayori, T. ; Ohashi, M. ; Wataze, M. ; Suzuki, T. ; Kusunoki, K.

  • fYear
    1982
  • fDate
    15-17 June 1982
  • Firstpage
    153
  • Lastpage
    155
  • Abstract
    Internal matched devices with 2W and 5W power output at 10 GHz have been developed by using up-side-down mounted GaAs FETs which have PSB (Plated Source Bridge) structures. By parallel running two 5W devices, 7W solid-state power amplifiers in X-band have been practical.
  • Keywords
    Bridges; Electrodes; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance; Inductance; Power amplifiers; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1982 IEEE MTT-S International
  • Conference_Location
    Dallas, TX, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1982.1130644
  • Filename
    1130644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675661