• DocumentCode
    2675689
  • Title

    Design Of Medium Power, 6-12 GHz GaAs FET Amplifier, Using High Dielectric Networks

  • Author

    McCarter, S.D. ; Pavio, A.M.

  • fYear
    1982
  • fDate
    15-17 June 1982
  • Firstpage
    159
  • Lastpage
    161
  • Abstract
    The input and output networks for a 4800 µm (four 1200 µm cells) gallium arsenide FET amplifier were successfully developed and constructed on high dielectric substrate material using distributed transmission line techniques. This paper describes the design and fabrication of the input and output networks and the performance of a completed 6-12 GHz 4 watt amplifier.
  • Keywords
    Dielectric measurements; Dielectric substrates; Gallium arsenide; High power amplifiers; Impedance; Instruments; Microwave FETs; Power transmission lines; Scattering parameters; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1982 IEEE MTT-S International
  • Conference_Location
    Dallas, TX, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1982.1130646
  • Filename
    1130646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675689