Title :
GaSe1−xSx crystals for teraherz frequency range
Author :
Atuchin, Victor V. ; Andreev, Yury M. ; Sarkisov, Sergei Yu ; Morozov, A.N. ; Luo, C.W. ; Ku, S.A.
Author_Institution :
Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk, Russia
Abstract :
GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.
Keywords :
III-VI semiconductors; crystal growth from melt; crystal structure; optical constants; semiconductor growth; terahertz wave spectra; transmission electron microscopy; Bridgman-Stockbarger technique; GaSe1-xSx; TEM; crystal structure; doped crystals; frequency-dependent optical constant; terahertz time-domain spectroscopy; Crystals; Doping; Frequency conversion; Gases; Nonlinear optics; Optical harmonic generation; Optical pumping; Optical refraction; Optical signal processing; Optical variables control; Gallium selenide; doping; optical properties;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173939
