Title :
Characterization of broadband Monolithic Gallium Nitride distributed power amplifier using thermal imaging technique
Author_Institution :
Rockwell Collins, Inc., Cedar Rapids, IA, USA
Abstract :
A thermal imaging technique is used to characterize a Monolithic Gallium Nitride distributed power amplifier under DC and RF drive conditions. The temperature difference among the active cells (transistors) in distributed power amplifier is observed under RF drive conditions. It is believed that this non-uniform performance of individual cells in broadband distributed power amplifier results in its lower efficiency and lower power output comparing to narrowed band design. The experimentally observed results match with the results of large signal simulation. The technique can be used to optimize the distributed power amplifier design in the future.
Keywords :
DC amplifiers; III-V semiconductors; distributed amplifiers; gallium compounds; high electron mobility transistors; infrared imaging; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; wideband amplifiers; DC drive; GaN; RF drive; active cells; broadband distributed power amplifier; thermal imaging technique; Drives; Gallium nitride; Imaging; Logic gates; MMICs; Power amplifiers; Radio frequency; Distributed power amplifier; GaN/Si HEMT; broadband power amplifier; thermal imaging;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2011 IEEE Topical Conference on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8416-4
Electronic_ISBN :
978-1-4244-8415-7
DOI :
10.1109/PAWR.2011.5725379
