DocumentCode
2675734
Title
Class B Operation of Microwave FETs for Array Module Applications
Author
Cohn, M. ; Degenford, J.E. ; Freitag, R.G.
fYear
1982
fDate
15-17 June 1982
Firstpage
169
Lastpage
171
Abstract
In addition to the well known class B advantages of high eta /sub PA/ and self turn on for pulsed operation, it is shown herein that class B FET amplifiers have several other important features including: 1) Significantly reduced power dissipation 2) A dynamic range of typically 8-10 dB over which gain is constant and power added efficiency is >30%. 3) Phase behavior (static and dynamic) is comparable to that observed with similar FETs operated class A. 4) Absence of erratic phase behavior during pulse turn-on and turn-off. These features make class B operation of power FET´s very attractive for phased array module applications.
Keywords
Dynamic range; Gain; High power amplifiers; Microwave FETs; Microwave antenna arrays; Operational amplifiers; Phased arrays; Power dissipation; Pulse amplifiers; Time of arrival estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130649
Filename
1130649
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