Title :
Features of thin film CVD processes used in IC device technology
Author :
Vasilyev, Vladislav Yu
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Basic film step coverage and gap-fill data has been consolidated and compared with the observed thin film CVD kinetics trends. Based on some assumptions regarding reaction kinetics, obtained correlations are believed to be applicable for an optimization of ultra small gap filling in deep submicron integrated circuit technology.
Keywords :
chemical vapour deposition; circuit optimisation; integrated circuit technology; thin films; CVD kinetics; integrated circuit device technology; optimization; reaction kinetics; thin film CVD process; ultra small gap filling; Chemical technology; Chemical vapor deposition; Inductors; Integrated circuit technology; Kinetic theory; Semiconductor thin films; Sputtering; Thin film circuits; Thin film devices; Transistors; Integrated circuit technology; chemical vapor deposition; gap-fill; step coverage; thin films;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173942
