3.3 ∼ 3.6GHz 28dBm power amplifier for WiMAX CPE applications

Author

Lee, Kwangchan ; Shin, Jinho ; Lee, Jongsoo

Author_Institution

Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2011

fDate

16-19 Jan. 2011

Firstpage

25

Lastpage

28

Abstract

This paper presents the design and measurement results of 28dBm power amplifier from 3.3GHz to 3.6GHz for WiMAX CPE (Consumer Premises Equipment) applications. The power amplifier is designed with a 4 stage cascade structure to meet the high gain specification. Moreover, the loadline is designed with 3 section Chebychev LPF matching topology to have the broadband characteristics. All interstage matching have a 2 section matching topology. Especially, the 3^rd interstage matching network has a combined HPF - LPF 2 section matching network. The power amplifier is manufactured with 2μm InGaP/GaAs HBT process. The performances of the power amplifier were verified by measuring power gain, efficiency, and linearity with respect to output power sweep.

Keywords

III-V semiconductors; WiMax; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave power amplifiers; Chebychev LPF matching topology; HBT process; InGaP-GaAs; WiMAX CPE applications; consumer premises equipment; frequency 3.3 GHz to 3.6 GHz; interstage matching; power amplifier; size 2 mum; Broadband communication; Impedance; Impedance matching; Power amplifiers; Power generation; Power measurement; WiMAX; CPE; EVM; OFDMA; Power Amplifier; WiMAX; broadband matching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2011 IEEE Topical Conference on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8416-4

Electronic_ISBN

978-1-4244-8415-7

Type

conf

DOI

10.1109/PAWR.2011.5725380

Filename

5725380