Anisotropy of current-voltage characteristics in PbSnTe:In film structures

Author

Epov, Vladimir S. ; Klimov, Alexander E. ; Shumsky, Vladimir N.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

120

Lastpage

123

Abstract

In the present work, we propose a model to describe the anisotropy of current-voltage characteristics in PbSnTe:In films at low temperatures under electron injection out of contacts. The model is developed considering the ferroelectric properties of PbSnTe:In. Data on the temperature dependence of the anisotropy are reported.

Keywords

IV-VI semiconductors; charge injection; electric domains; ferroelectric transitions; indium; lead compounds; narrow band gap semiconductors; semiconductor doping; semiconductor thin films; tin compounds; PbSnTe:In; anisotropy; current-voltage characteristics; domain structure; electron injection; ferroelectric phase transition; film structures; narrow-band semiconductor; Anisotropic magnetoresistance; Charge carriers; Current measurement; Current-voltage characteristics; Dielectrics; Ferroelectric films; Ferroelectric materials; Magnetic field measurement; Temperature; Voltage; Narrow-band semiconductor; anisotropy; contact injection; ferroelectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173945

Filename

5173945