Title :
Anisotropy of current-voltage characteristics in PbSnTe:In film structures
Author :
Epov, Vladimir S. ; Klimov, Alexander E. ; Shumsky, Vladimir N.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
In the present work, we propose a model to describe the anisotropy of current-voltage characteristics in PbSnTe:In films at low temperatures under electron injection out of contacts. The model is developed considering the ferroelectric properties of PbSnTe:In. Data on the temperature dependence of the anisotropy are reported.
Keywords :
IV-VI semiconductors; charge injection; electric domains; ferroelectric transitions; indium; lead compounds; narrow band gap semiconductors; semiconductor doping; semiconductor thin films; tin compounds; PbSnTe:In; anisotropy; current-voltage characteristics; domain structure; electron injection; ferroelectric phase transition; film structures; narrow-band semiconductor; Anisotropic magnetoresistance; Charge carriers; Current measurement; Current-voltage characteristics; Dielectrics; Ferroelectric films; Ferroelectric materials; Magnetic field measurement; Temperature; Voltage; Narrow-band semiconductor; anisotropy; contact injection; ferroelectric;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173945
