HEMT GaAs/GaN power amplifiers architecture with discrete dynamic voltage bias control in envelope tracking RF transmitter for W-CDMA signals

Author

Mercanti, Massimiliano ; Cidronali, Alessandro ; Maurri, Stefano ; Manes, Gianfranco

Author_Institution

Dept. Electron. & Telecomm, Univ. of Florence, Florence, Italy

fYear

2011

fDate

16-19 Jan. 2011

Firstpage

9

Lastpage

12

Abstract

A new approach to the average efficiency improvement based on a combined 2-PAs architecture is presented. It uses discrete power control and dynamic supply voltage, which allows enhanced efficiency at low power level. It enables envelope tracking RF transmitter with higher average efficiency than classical approach. At 2.14 GHz CW we got an average efficiency of 42.5%, 6.1% better than the classical approach with equal peak P_out = 35 dBm. The peak increment of PAE is 13.3% at 16.4 dB of power back-off.

Keywords

code division multiple access; high electron mobility transistors; power amplifiers; radio tracking; radio transmitters; voltage control; GaAs-GaN; HEMT; W-CDMA signal; discrete dynamic voltage bias control; discrete power control; dynamic supply voltage; efficiency 13.3 percent; efficiency 42.5 percent; envelope tracking RF transmitter; peak increment; power amplifier architecture; Digital video broadcasting; Dynamic range; Gain; Linearity; Multiaccess communication; Power amplifiers; Power generation; GaN PA; average efficiency; dynamic voltage bias control; envelope tracking;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2011 IEEE Topical Conference on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8416-4

Electronic_ISBN

978-1-4244-8415-7

Type

conf

DOI

10.1109/PAWR.2011.5725384

Filename

5725384