DocumentCode
2675963
Title
Researching of using transistor in cap mode as element of a capacitor-transistor logic
Author
Nikolaev, Artyom V.
Author_Institution
MIEE (TU), Moscow, Russia
fYear
2009
fDate
1-6 July 2009
Firstpage
145
Lastpage
146
Abstract
This paper consider possibility of building complex logic capacitor-transistor devices with using transistor in cap mode (with shorted source and drain) as cap element. Parameters deviations from theoretical values caused by real device influence are obtained with technology device modeling in ISE TCAD.
Keywords
MOS capacitors; MOSFET; logic gates; technology CAD (electronics); CTL inverter; ISE TCAD; MOS structure; MOS transistor; cap mode; complex logic capacitor-transistor devices; Capacitance; Inverters; Logic devices; MOS capacitors; MOSFETs; Pulse circuits; Pulsed power supplies; Rails; Solid modeling; Voltage; CTL;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-4571-4
Type
conf
DOI
10.1109/EDM.2009.5173953
Filename
5173953
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