Title :
Device simulation of 0.1 μm gate-length, 77 K operated, ultra-thin film SOI-MOSFETs
Author :
Aoki, H. ; Okabayashi, H. ; Mogami, T.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
Summary form only given. The results obtained from two-dimensional computer simulation of 0.1-μm gate-length SOI MOSFETs are reported. The results show that 0.1 μm gate-length MOSFETs, even without lightly doped drain structures and substrate biases, present good I-V characteristics, practically free of the short-channel effect, for VDD=1~1.5 V and 77 K operation, when the SOI thickness is reduced to ~30 nm or less for a channel doping level of ~5×1017 cmc3
Keywords :
digital simulation; insulated gate field effect transistors; semiconductor device models; semiconductor technology; semiconductor-insulator boundaries; 0.1 micron; 1 to 1.5 V; 30 nm; 77 K; I-V characteristics; SOI thickness; channel doping level; gate-length; two-dimensional computer simulation; ultra-thin film SOI-MOSFETs; Electrons; MOSFETs; Substrates; Voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69805
