A comprehensive gate-lag model for digitally modulated RF power amplifiers

Author

Shirokov, M.S. ; Bao, J.W. ; Wei, C.J. ; Hwang, J. C M

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

fYear

1997

fDate

35715

Firstpage

98

Lastpage

100

Abstract

A time-domain/frequency-domain mixed-mode MESFET model has been developed to predict both transient and steady-state performances of digitally modulated RF power amplifiers. Steady-state performance was predicted by a conventional large-signal model in the frequency domain with the model parameters manually adjusted according to measured RF waveforms. Gate lag due to surface/substrate traps was predicted by a parasitic current source which characteristics were determined by an RC delay circuit and empirical equations in terms of on/off voltages/times and the drain supply voltage

Keywords

MESFET circuits; frequency-domain analysis; power amplifiers; semiconductor device models; time-domain analysis; RC delay circuit; RF power amplifier; digital modulation; gate lag; large-signal model; parasitic current source; steady-state performance; substrate traps; surface traps; time-domain/frequency-domain mixed-mode MESFET model; transient performance; Digital modulation; MESFETs; Performance evaluation; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Steady-state; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1997., Proceedings

Conference_Location

Anaheim, CA

Print_ISBN

0-7908-0064-0

Type

conf

DOI

10.1109/GAASRW.1997.656140

Filename

656140