DocumentCode :
2676499
Title :
Efficient Low-Noise Three Port X-Band FET Oscillator Using Two Dielectric Resonators.
Author :
Khanna., A.P.S. ; Obregon, J. ; Garault, Y.
fYear :
1982
fDate :
15-17 June 1982
Firstpage :
277
Lastpage :
279
Abstract :
A new, simple to realize, X band, 3 port stable FET oscillator is presented. The oscillator using 2 identical dielectric resonators as oscillator circuit elements, operates at 8.53 GHz, has an overall efficiency of 22% and FM noise better than 0.2 Hz/ /spl radic/Hz at 10 KHz from carrier.
Keywords :
Circuit noise; Coupling circuits; Dielectrics; FETs; Feedback; Impedance; Microstrip components; Microstrip resonators; Oscillators; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1982.1130689
Filename :
1130689
Link To Document :
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