Title :
A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS
Author :
Wang, X. ; Fan, S. ; Qin, B. ; Lin, L. ; Fang, Q. ; Zhao, H. ; Tang, H. ; Liu, J. ; Shi, Z. ; Wang, A. ; Yang, L. ; Cheng, Y.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Abstract :
This paper presents design of an all-digital fully-integrated 5th-order Gaussian pulse generator (PG) for full band (3.1GHz-10.6GHz) impulse radio ultra wideband (IR-UWB) transceiver SoC. The design is implemented in a foundry 0.18μm CMOS process. New FCC effective isotropic radiated power (EIRP) aware design technique is used to optimize the PG. Measurement shows peak pulse amplitude of 533mV at 100MHz pulse repeating frequency (PRF) and pulse width of 418pS. 5kV ESD protection is integrated. This 5th Gaussian PG consumes the lowest reported power of 0.05pJ/p-mV and support data rate to 2.4Gbps.
Keywords :
CMOS digital integrated circuits; electrostatic discharge; microwave integrated circuits; pulse generators; radio transceivers; system-on-chip; ultra wideband communication; ESD protection; FCC effective isotropic radiated power aware design technique; all-digital fully-integrated 5th-order Gaussian pulse generator; bit rate 2.4 Gbit/s; foundry CMOS process; frequency 100 MHz; frequency 3.1 GHz to 10.6 GHz; full-band IR-UWB transceiver; impulse radio ultra wideband transceiver SoC; pulse repeating frequency; size 0.18 mum; voltage 5 kV; voltage 533 mV; CMOS integrated circuits; Electrostatic discharge; FCC; Pulse generation; Pulse measurements; Radio frequency; Semiconductor device measurement; 5th-order Gaussian; ESD protection; Impulse radio; UWB; pulse generator;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2011 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-7687-9
DOI :
10.1109/RWS.2011.5725432
