Title :
Optoelectronic devices based on InSb and InAs MIS structures. perculiarities of construction, parameters and application
Author :
Kuryshev, Georgy L.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
Results of experimental investigations for different line and matrix hybrid modules and IR systems (matrix thermographer - temperature resolution 4-8 mK, IR microscope - spatial resolution 3-4 mum, rapid spectrographer ~104 spectra per sec.) based on InAs CCI radiation detectors are laid down in the present contribution.
Keywords :
III-V semiconductors; MIS devices; indium compounds; infrared imaging; infrared spectrometers; particle detectors; photodetectors; CCI radiation detectors; IR microscope; InAs; InSb; MIS structures; matrix hybrid modules; matrix thermographer; optoelectronic devices; rapid spectrographer; spatial resolution; temperature resolution; Capacitance; Microscopy; Optoelectronic devices; Physics; Radiation detectors; Seminars; Spatial resolution; Spectroscopy; Temperature distribution; Temperature sensors; IR microscopy; Temperature sensitivity; rapid-functioning; spatial resolution;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5174002
