An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface

This paper presents a pulse-based inductive-coupling transceiver in 65 nm CMOS for high-speed wireless proximity communication. The transceiver operates at 0.5 V supply voltage. A pulse bootstrap circuit and a common drain output stage enables transmitter to operate at ultra-low voltage. In the receiver, a gain boosted common-gate amplifier is used to reduce the input impedance and suppress the ringing of received pulse signal. The data rate and energy efficiency are 1.1 Gb/s/ch and 0.91 pJ/bit, respectively at 0.5 V supply voltage. The data rate can be increased to 1.7 Gb/s/ch at 0.75 V.