Title :
A low temperature 12 ns DRAM
Author :
Henkels, W.H. ; Lu, N.C.C. ; Hwang, W. ; Rajeevakumar, T.V. ; Franch, R.L. ; Jenkins, K.A. ; Bucelot, T.J. ; Heidel, D.F. ; Immediato, M.J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Results are presented of measurements on cryogenic operation of a high-speed 512-kb CMOS dynamic RAM (DRAM). Comprehensive investigations focused on circuit concerns particularly relevant to high speed. The measured access time was 12 ns, and the results show that noise, power, and soft error rate do not preclude very-high-speed DRAM operation at cryogenic temperatures. Compared to room-temperature operation the observed improvement in access time was about 1.7× for V DD=5 V. Compared to 85°C operation the improvement was 2.2×
Keywords :
CMOS integrated circuits; cryogenics; integrated memory circuits; random-access storage; 12 ns; 512 kbit; 77 K; CMOS dynamic RAM; DRAM; access time; cryogenic operation; high speed memory IC; low temperature; Circuit noise; Circuit testing; Copper; Cryogenics; MOS devices; Power measurement; Random access memory; Semiconductor device measurement; Temperature measurement; Temperature sensors;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68576
