DocumentCode :
2677734
Title :
Significant reduction of threshold current density of GaAs/AlGaAs terahertz quantum cascade lasers by using high-al-content AlGaAs barrier
Author :
Lin, Tsung-Tse ; Ying, Leiying ; Hirayama, Hideki
Author_Institution :
Terahertz Quantum Device Lab., RIKEN, Sendai, Japan
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
The temperature dependent of threshold current density (Jth) of GaAs/AlxGa1-xAs terahertz quantum cascade lasers (THz QCLs) with different Al barrier composition are studied and reported here. One of the most important issues of the recent THz QCLs is their limited operation temperature. Increasing the Al composition in longitudinal optical (LO) phonon depopulation design THz QCLs tend to reduce Jth and improve current dynamic range of lasers, which is expected to increase the maximum operation temperature (Tmax).
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; quantum cascade lasers; submillimetre wave lasers; Al barrier composition; GaAs-AlxGa1-xAs; GaAs/AlGaAs terahertz quantum cascade lasers; high-Al-content AlGaAs barrier; longitudinal optical phonon depopulation; threshold current density; Dynamic range; Gallium arsenide; Phonons; Quantum cascade lasers; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6105198
Filename :
6105198
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2677734
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