Tunable low-voltage dual-directional ESD protection for RFICs

Author

Liu, Jian ; Lin, Lin ; Xin Wang ; Zhao, Hui ; Tang, He ; Fang, Qiang ; Wang, Xingang ; Yang, Liwu ; Xie, Haolu ; Fan, Siqiang ; Zhao, Bin ; Zhang, Gary ; Xingang Wang

Author_Institution

Dept. of EE, Univ. of California, Riverside, CA, USA

fYear

2011

fDate

16-19 Jan. 2011

Firstpage

279

Lastpage

282

Abstract

This paper reports a tunable low triggering voltage, dual-directional SCR ESD protection structure in CMOS for RF ICs. A new embedded gate-coupling technique is used to reduce and adjust its triggering voltage. Experiment shows a low discharging resistance of ~0.26Ω, low leakage current of ~0.19nA, low parasitic capacitance of ~150fF and ultra fast response time of ~100pS. This structure achieves ESD protection of >;9.20kV HBM and >;500V CDM for a 90μm device. A high ESD protection to Si ratio of ESDV~8.17V/μm² is obtained for RF IC applications.

Keywords

CMOS integrated circuits; electrostatic discharge; low-power electronics; radiofrequency integrated circuits; CMOS; RFIC; discharging resistance; embedded gate-coupling technique; leakage current; parasitic capacitance; size 90 mum; triggering voltage; tunable low-voltage dual-directional ESD protection; CMOS integrated circuits; Electrostatic discharge; Logic gates; Radio frequency; Testing; Thyristors; ESD protection; RF IC; SCR; dual-directional; tunable triggering;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2011 IEEE

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-7687-9

Type

conf

DOI

10.1109/RWS.2011.5725504

Filename

5725504