DocumentCode :
2677825
Title :
X, Ku-Band GaAs Monolithic Amplifier
Author :
Tajima, Y. ; Tsukii, T. ; Tong, E. ; Mozzi, R. ; Hanes, L. ; Wrona, B.
fYear :
1982
fDate :
15-17 June 1982
Firstpage :
476
Lastpage :
478
Abstract :
A two-stage X-, Ku-band monolithic FET amplifier has been developed. Initial results indicate a gain of 7-10 dB across the 8-20 GHz band with a typical rf power output of 100 mW. A balanced amplifier consisting of two two-stage amplifiers and a pair of Lange couplers yielded 10.5 +- 1 dB gain from 7.5 to 18 GHz and an output power of 150-250 mW in Ku-band.
Keywords :
Broadband amplifiers; Capacitors; Circuits; FETs; Frequency; Gain; Gallium arsenide; Power amplifiers; Radiofrequency amplifiers; Resistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1982.1130762
Filename :
1130762
Link To Document :
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