• DocumentCode
    267789
  • Title

    Ultrasensitive Si nanowire probe for magnetic resonance detection

  • Author

    Yong-Jun Seo ; Toda, Masayoshi ; Kawai, Yusuke ; Ono, Takahito

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2014
  • fDate
    26-30 Jan. 2014
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    In this study, we have fabricated a 210 nm-wide and 32 μm-long Si nanowire probe with a Si mirror from a silicon-on-insulator wafer. Additionally, a Nd-Fe-B magnet is mounteded at the end of the nanowire for magnetic force detection in MRFM measurements. The fabricated probe shows a resonance frequency f0 of 11.256 kHz and a Q factor of 12000 after annealing at 800°C for 2 hours in forming gas. The probe exhibits atto-newton sensitivity, and the measurement of force mapping based on electron spin resonance is demonstrated for three-dimensional imaging of radical density. The detected force is approximately 8.5 aN at room temperature.
  • Keywords
    annealing; boron; elemental semiconductors; iron; magnetic force microscopy; magnetic resonance imaging; nanowires; neodymium; paramagnetic resonance; silicon-on-insulator; 3D imaging; MRFM measurements; Nd-Fe-B; Si; attonewton sensitivity; electron spin resonance; frequency 11.256 kHz; magnetic force detection; magnetic resonance detection; radical density; silicon-on-insulator wafer; size 210 nm; size 32 mum; temperature 800 degC; time 2 hour; ultrasensitive nanowire probe; Force; Magnetic resonance; Magnetic resonance imaging; Magnetic separation; Probes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2014.6765596
  • Filename
    6765596