DocumentCode :
267793
Title :
ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
Author :
Warren, Robert ; Sammoura, Firas ; Kozinda, A. ; Liwei Lin
Author_Institution :
Univ. of California, Berkeley, Berkeley, CA, USA
fYear :
2014
fDate :
26-30 Jan. 2014
Firstpage :
167
Lastpage :
170
Abstract :
This work presents the first demonstration of atomic layer deposition (ALD) ruthenium oxide (RuO2) and its conformal coating onto vertically aligned carbon nanotube (CNT) forests as supercapacitor electrodes. Specific accomplishments include: (1) successful demonstration of ALD RuO2 deposition, (2) uniform coating of RuO2 on a vertically aligned CNT forest, and (3) an ultra-high specific capacitance of 100 mF/cm2 from prototype electrodes with a scan rate of 100 mV/s. Advantages of the ALD method include precise control of the RuO2 layer thickness and composition without the use of CNT-binder molecules. In addition to high capacitance, preliminary results indicate that the ALD RuO2-CNTs have good stability over repeated cycling. Besides its use in supercapacitors, ALD-RuO2 has potential NEMS applications: in biosensors and pH sensing [1], as a strong oxidative material in multiple chemical processes [2], and in catalytic reactions for photocatalytic systems [3].
Keywords :
atomic layer deposition; carbon nanotubes; electrochemical electrodes; ruthenium compounds; supercapacitors; ALD method; NEMS applications; RuO2; atomic layer deposition method; biosensors; catalytic reactions; conformal coating; multiple chemical processes; oxidative material; pH sensing; photocatalytic systems; ruthenium oxide-carbon nanotube electrodes; supercapacitor electrodes; ultrahigh specific capacitance; vertically aligned CNT forest; vertically aligned carbon nanotube forests; Capacitance; Coatings; Electrodes; Films; Supercapacitors; Surface treatment; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/MEMSYS.2014.6765600
Filename :
6765600
Link To Document :
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