Title :
A Medium Power Solid State Amplifier for V-Band
Author :
Wolfert, P.H. ; Crowley, J.D. ; Fank, F.B.
Abstract :
A solid state amplifier for the 54 to 58 GHz band is described. The amplifier uses two layer InP Gunn devices. Three stages of amplification provide an output power of 100 mW at a gain of 15 dB. The small signal gain is 30 dB; the noise figure is in the 15.5 to 16.5 dB range. The design of a broadband low-loss V-band circulator, which was used in the amplifier, is also described.
Keywords :
Bandwidth; Broadband amplifiers; Diodes; Gain; Gunn devices; Indium phosphide; Power amplifiers; Power generation; Radiofrequency amplifiers; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130770
