Title :
CW InP Gunn Diode Power Combining at 90 GHz
Author :
Sowers, J.J. ; Crowley, J.D. ; Fank, F.B.
Abstract :
CW power combining of two, three, or four InP Gunn devices has been achieved at 90 GHz. Diodes were first characterized in individual radial line circuit modules. Modules with similar operating characteristics were stacked in-line to form power combining units. Greater than 1/4 watt was obtained from four InP diodes.
Keywords :
Circuits; Diodes; Gallium arsenide; Gunn devices; Heat sinks; Indium phosphide; Millimeter wave devices; Millimeter wave technology; Packaging; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130771
