Title :
High Frequency Limitation Of GaAs Transit-Time Diodes
Author :
Lee, N. ; Dee-Son Pan
Abstract :
The high-frequency capabilities of GaAs transit-time diodes have been investigated by extensive computer simulations. The spatial effect of interband tunneling and impact ionization were included. We have found GaAs diodes can operate with significant efficiency, approximately 5% in the millimeter and sub-millimeter frequency range. These results are in agreement with a recent report of a 338 GHz GaAs TUNNETT.
Keywords :
Charge carrier processes; Computational modeling; Computer simulation; Diodes; Equations; Frequency; Gallium arsenide; Impact ionization; Millimeter wave devices; Tunneling;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130774
