DocumentCode
2678055
Title
V-Band InP Gunn Diode
Author
Hongzhi, D.Y.Z. ; Youngxi, S. ; Jingzhi, F.
fYear
1982
fDate
15-17 June 1982
Firstpage
516
Lastpage
516
Abstract
The n/sup +/-n-n/sup +/ InP wafers are continually grown by VPE. An integral heat sink process is utilized to fabricate CW InP Gunn diodes with multiple-layer n/sup +/-n-n/sup +/, which operate in V-band. The rf performance of the diode is determined using a coaxial waveguide cavity. CW output powers of 151 mW at 50.6 GHz and 147 mW at 58.3 GHz have been achieved with efficiencies of 2.48% and 2. 54%, respectively.
Keywords
Coaxial components; Diodes; Etching; Gunn devices; Heat sinks; Hydrogen; Indium phosphide; Packaging; Power generation; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130775
Filename
1130775
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