• DocumentCode
    2678109
  • Title

    A Si0.7Ge0.3 strained layer etch stop for the generation of bond and etch back SOI

  • Author

    Godbey, D. ; Twigg, M. ; Palkuti, L. ; Leonov, P. ; Wang, J. ; Hughes, H. ; Kub, F.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • fYear
    1989
  • fDate
    3-5 Oct 1989
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    Summary form only given. The authors discuss the use of an MBE grown Si0.7Ge0.3 strained layer as an etch stop, and the successful fabrication of bond and etch-back silicon on insulator with an undoped 200-nm silicon layer using this technology. Full integrity of the etch stop was maintained following oxidation and bonding of the prime wafer. Defects generated in the strained etch stop region during thermal treatments did not propagate into the active silicon device region
  • Keywords
    Ge-Si alloys; etching; molecular beam epitaxial growth; oxidation; semiconductor technology; semiconductor-insulator boundaries; 200 nm; MBE; Si-Ge alloys; Si-SiO2; Si0.7Ge0.3 strained layer etch stop; bond and etch back SOI; silicon on insulator; thin Si layer; wafer bonding; Etching; Fabrication; Germanium silicon alloys; Semiconductor films; Silicon alloys; Silicon germanium; Silicon on insulator technology; Substrates; Surface treatment; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1989., 1989 IEEE
  • Conference_Location
    Stateline, NV
  • Type

    conf

  • DOI
    10.1109/SOI.1989.69806
  • Filename
    69806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2678109