Title :
A Si0.7Ge0.3 strained layer etch stop for the generation of bond and etch back SOI
Author :
Godbey, D. ; Twigg, M. ; Palkuti, L. ; Leonov, P. ; Wang, J. ; Hughes, H. ; Kub, F.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
Summary form only given. The authors discuss the use of an MBE grown Si0.7Ge0.3 strained layer as an etch stop, and the successful fabrication of bond and etch-back silicon on insulator with an undoped 200-nm silicon layer using this technology. Full integrity of the etch stop was maintained following oxidation and bonding of the prime wafer. Defects generated in the strained etch stop region during thermal treatments did not propagate into the active silicon device region
Keywords :
Ge-Si alloys; etching; molecular beam epitaxial growth; oxidation; semiconductor technology; semiconductor-insulator boundaries; 200 nm; MBE; Si-Ge alloys; Si-SiO2; Si0.7Ge0.3 strained layer etch stop; bond and etch back SOI; silicon on insulator; thin Si layer; wafer bonding; Etching; Fabrication; Germanium silicon alloys; Semiconductor films; Silicon alloys; Silicon germanium; Silicon on insulator technology; Substrates; Surface treatment; Wafer bonding;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69806
