Title :
Growth of piezoelectric single crystals by the pulling-down method
Author :
Tanaka, H. ; Sakamoto, H. ; Hashimoto, S. ; Nagai, K. ; Kodaira, K.
Author_Institution :
TOYO Commun. Equipment Co. Ltd., Kanagawa, Japan
Abstract :
Li2B4O7 and LiNbO3 single crystals were grown by the pulling-down (PD) method. By the method, single crystals can be easily obtained by solidifying the melt flowing out of a hole at the bottom of a crucible. The bubble free Li 2B4O7 crystals were obtained by using the PD method. Dislocation density was estimated to be about 1~5×104 cm-2, which was somewhat more than that obtained by other methods. Crack free LiNbO3 crystals have also successfully grown by the PD method. The as-grown crystals were transparent with slightly yellow in color. The crystals had stoichiometric composition because of feeding stoichiometric powder
Keywords :
crystal growth from melt; dislocation density; lithium compounds; piezoelectric materials; stoichiometry; Curie temperature; Li2B4O7; LiNbO3; SAW device materials; bubble free crystals; crack free crystals; dislocation density; etch pattern; ferroelectric domain structure; lattice parameters; piezoelectric single crystals; pulling-down method; single crystal growth; stoichiometric composition; transparent as-grown crystals; Communication equipment; Crystalline materials; Crystals; Educational institutions; Optical devices; Optical materials; Platinum; Powders; Surface acoustic wave devices; Viscosity;
Conference_Titel :
Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International
Conference_Location :
Kansas City, MO
Print_ISBN :
0-7803-5838-4
DOI :
10.1109/FREQ.2000.887345
