DocumentCode :
2678309
Title :
Anelastic loss in langatate
Author :
Johnson, Ward ; Kim, Sudook ; Lauri, Damian
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear :
2000
fDate :
2000
Firstpage :
186
Lastpage :
190
Abstract :
Anelastic loss in langatate (La3Ga5.5Ta0.5O14) was measured as a function of temperature from 80 to 1080 K at ultrasonic frequencies from 0.5 to 1.8 MHz. The specimens were monocrystalline cylinders with the trigonal axis parallel to the cylinder axis. Q-1 and the resonant frequencies were measured with inductive electromagnetic-acoustic and contacting transduction techniques. On cooling from room temperature to 80 K, Q-1 decreased by approximately an order of magnitude, with the most rapid drop occurring in the 220-260 K range. Part of this temperature dependence may result from the phonon-phonon interaction. However, the frequency dependence of Q-1 at room temperature is inconsistent with theories for the phonon-phonon interaction, and Qf at room temperature is much lower than values at higher frequencies reported by other researchers. These results suggest that Q-1 measured at and below room temperature is dominated by an anelastic defect contribution, rather than the intrinsic phonon-phonon damping. Dislocation damping is considered the most likely candidate for this contribution. At elevated temperatures, a relaxation peak appears with a maximum in the 750-810 K range for frequencies between 0.5 and 1.8 MHz. The activation energy of the relaxation is 1.1 eV, which is typical of point-defect relaxations. A second peak appears near 860 K during the first heating and disappears after heating to 1080 K. The observed peaks rise above a background that increases rapidly at the highest temperatures. By analogy with a similar effect observed in quartz, this background is assumed to arise from the anelastic relaxation of diffusing interstitial impurities
Keywords :
anelastic relaxation; dislocation damping; lanthanum compounds; phonon-defect interactions; phonon-phonon interactions; piezoelectric materials; vibrations; 0.5 to 1.8 MHz; 80 to 1080 K; La3Ga5.5Ta0.5O14; activation energy; anelastic defect contribution; anelastic loss; anelastic relaxation; diffusing interstitial impurities; dislocation damping; frequency dependence; langasite isomorph; langatate; monocrystalline cylinders; phonon-phonon interaction; point-defect relaxations; relaxation peak; resonant frequencies; temperature dependence; ultrasonic frequencies; Damping; Electromagnetic measurements; Frequency measurement; Heating; Loss measurement; Q measurement; Resonant frequency; Temperature dependence; Temperature distribution; Ultrasonic variables measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International
Conference_Location :
Kansas City, MO
ISSN :
1075-6787
Print_ISBN :
0-7803-5838-4
Type :
conf
DOI :
10.1109/FREQ.2000.887351
Filename :
887351
Link To Document :
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