• DocumentCode
    2678309
  • Title

    Anelastic loss in langatate

  • Author

    Johnson, Ward ; Kim, Sudook ; Lauri, Damian

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Boulder, CO, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    186
  • Lastpage
    190
  • Abstract
    Anelastic loss in langatate (La3Ga5.5Ta0.5O14) was measured as a function of temperature from 80 to 1080 K at ultrasonic frequencies from 0.5 to 1.8 MHz. The specimens were monocrystalline cylinders with the trigonal axis parallel to the cylinder axis. Q-1 and the resonant frequencies were measured with inductive electromagnetic-acoustic and contacting transduction techniques. On cooling from room temperature to 80 K, Q-1 decreased by approximately an order of magnitude, with the most rapid drop occurring in the 220-260 K range. Part of this temperature dependence may result from the phonon-phonon interaction. However, the frequency dependence of Q-1 at room temperature is inconsistent with theories for the phonon-phonon interaction, and Qf at room temperature is much lower than values at higher frequencies reported by other researchers. These results suggest that Q-1 measured at and below room temperature is dominated by an anelastic defect contribution, rather than the intrinsic phonon-phonon damping. Dislocation damping is considered the most likely candidate for this contribution. At elevated temperatures, a relaxation peak appears with a maximum in the 750-810 K range for frequencies between 0.5 and 1.8 MHz. The activation energy of the relaxation is 1.1 eV, which is typical of point-defect relaxations. A second peak appears near 860 K during the first heating and disappears after heating to 1080 K. The observed peaks rise above a background that increases rapidly at the highest temperatures. By analogy with a similar effect observed in quartz, this background is assumed to arise from the anelastic relaxation of diffusing interstitial impurities
  • Keywords
    anelastic relaxation; dislocation damping; lanthanum compounds; phonon-defect interactions; phonon-phonon interactions; piezoelectric materials; vibrations; 0.5 to 1.8 MHz; 80 to 1080 K; La3Ga5.5Ta0.5O14; activation energy; anelastic defect contribution; anelastic loss; anelastic relaxation; diffusing interstitial impurities; dislocation damping; frequency dependence; langasite isomorph; langatate; monocrystalline cylinders; phonon-phonon interaction; point-defect relaxations; relaxation peak; resonant frequencies; temperature dependence; ultrasonic frequencies; Damping; Electromagnetic measurements; Frequency measurement; Heating; Loss measurement; Q measurement; Resonant frequency; Temperature dependence; Temperature distribution; Ultrasonic variables measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International
  • Conference_Location
    Kansas City, MO
  • ISSN
    1075-6787
  • Print_ISBN
    0-7803-5838-4
  • Type

    conf

  • DOI
    10.1109/FREQ.2000.887351
  • Filename
    887351