• DocumentCode
    2678313
  • Title

    Au/Al-metal bonding conditions for double metal waveguide on GaN based terahertz quantum cascade laser structure

  • Author

    Matsumoto, S. ; Terashima, W. ; Yasuda, T. ; Hirayama, H.

  • Author_Institution
    Dept. of Mater. Eng., Ishinomaki Senshu Univ., Miyagi, Japan
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigated metal bonging conditions of Au/Al layers formed on a GaN/Sapphire and on a GaAs substrates for a double metal waveguide of a GaN based terahertz quantum cascade laser. We found that the best bonding condition of Au/Al layers was under a pressure of 100 kg/cm2 at 200°C.
  • Keywords
    aluminium; bonding processes; gallium compounds; gold; quantum cascade lasers; sapphire; submillimetre wave lasers; wide band gap semiconductors; Au-Al; GaAs; GaN-Al2O3; double metal waveguide; metal bonding; temperature 200 degC; terahertz quantum cascade laser; Bonding; Gallium arsenide; Gallium nitride; Gold; Quantum cascade lasers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6105228
  • Filename
    6105228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2678313