Title :
Improving properties of THz photoconductors by bonding to a high thermal conductivity substrate
Author :
Latzel, P. ; Peytavit, E. ; Dogheche, E. ; Lampin, J. -F
Author_Institution :
IEMN, Univ. Lille 1, Villeneuve d´´Ascq, France
Abstract :
We present a way of bonding low-temperature-grown (LTG) GaAs to high thermal conductivity substrates. This should improve thermal dissipation and increase the output power of photoconductors, which has far-reaching consequences for many applications of THz photomixers.
Keywords :
III-V semiconductors; gallium arsenide; photoconducting materials; terahertz wave spectra; thermal conductivity; GaAs; THz photoconductors; THz photomixers; bonding; far-reaching consequences; low-temperature-grown GaAs; thermal conductivity substrate; thermal dissipation; Bonding; Conductivity; Gallium arsenide; Power generation; Silicon; Substrates; Thermal conductivity;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105231
