DocumentCode
2678376
Title
Improving properties of THz photoconductors by bonding to a high thermal conductivity substrate
Author
Latzel, P. ; Peytavit, E. ; Dogheche, E. ; Lampin, J. -F
Author_Institution
IEMN, Univ. Lille 1, Villeneuve d´´Ascq, France
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
We present a way of bonding low-temperature-grown (LTG) GaAs to high thermal conductivity substrates. This should improve thermal dissipation and increase the output power of photoconductors, which has far-reaching consequences for many applications of THz photomixers.
Keywords
III-V semiconductors; gallium arsenide; photoconducting materials; terahertz wave spectra; thermal conductivity; GaAs; THz photoconductors; THz photomixers; bonding; far-reaching consequences; low-temperature-grown GaAs; thermal conductivity substrate; thermal dissipation; Bonding; Conductivity; Gallium arsenide; Power generation; Silicon; Substrates; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6105231
Filename
6105231
Link To Document