Title :
The correlation between inter-modulation distortion of GaAs MESFETs and ungated recess width
Author :
Tkachenko, Y.A. ; Bartle, D. ; Wei, C.J. ; DiCarlo, P.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
Inter-modulation distortion of GaAs MESFET discrete and MMIC PA devices was found to be effected by the width of the ungated recess. Devices with ungated recess width in excess of 105 nm exhibit soft gain compression and out-of-spec inter-modulation performance. Degraded linearity is manifested in worse IM3 and significantly different IM5 dependence on the output power, whereas soft gain compression leads to premature power saturation, smaller power gain and power-added efficiency. Good correlation between the loadpull results, waveform measurements and 2-stage linear power amplifier performance data was obtained. This work provides insight into a critical device parameter for optimum performance of high linearity amplifier applications.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; integrated circuit measurement; intermodulation distortion; power MESFET; power integrated circuits; 0.8 micron; 2-stage linear power amplifier; GaAs; III V semiconductors; MESFET; MMIC power amplifier devices; correlation; degraded linearity; device parameter; high linearity amplifier applications; intermodulation distortion; loadpull results; optimum performance; output power; performance data; power gain; power-added efficiency; premature power saturation; soft gain compression; ungated recess width; waveform measurements; Degradation; Gallium arsenide; Gold; High power amplifiers; Linearity; MESFETs; MMICs; Optical amplifiers; Power amplifiers; Silicon;
Conference_Titel :
Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-5152-5
DOI :
10.1109/MTTTWA.1999.755126
