Title :
Broadband Monolithic Low-Noise Feedback Amplifiers
Author :
Rigby, P.N. ; Suffolk, J.R. ; Pengelly, R.S.
fDate :
May 31 1983-June 3 1983
Abstract :
A 0.6 to 6 GHz monolithic GaAs FET low-noise feedback amplifier has been developed. This amplifier chip has a gain of 6 dB and a noise figure of around 4 dB over the bandwidth. Gains of 8 dB have been-achieved at 1/2I /sub dss/ with 1 dB gain compression points of 21 dBm over the band. This paper discusses the design of such amplifiers using as an example a 1 to 10 GHz two stage monolithic amplifier chip presently under development which is capable of being cascaded up to total gains of 50 dB or so with +- 1.5 dB ripple.
Keywords :
Bandwidth; FETs; Feedback amplifiers; Frequency; Gain; Gallium arsenide; Inductance; MESFETs; Noise figure; Parasitic capacitance;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130806
