DocumentCode :
267880
Title :
Inductively coupled plasma etching of bulk tungsten for MEMS applications
Author :
Lu Song ; Nannan Li ; Shibin Zhang ; Jin Luo ; Jia Hu ; Yiming Zhang ; Shuhui Chen ; Jing Chen
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
fYear :
2014
fDate :
26-30 Jan. 2014
Firstpage :
502
Lastpage :
505
Abstract :
Tungsten based MEMS devices have the potential to be used for many applications, such as tools for micro electrical discharge machining and ultrasonic machining, or mold for inject molding. For the first time, bulk tungsten inductively coupled plasma (ICP) etching was developed and characterized, which is capable of producing high aspect ratio (>13) structures with feature size below 3μm. Etching depth of 230μm has been achieved at an etch rate up to 2.2μm/min. This technology offers big opportunities for MEMS applications.
Keywords :
micromechanical devices; sputter etching; bulk tungsten ICP etching; bulk tungsten inductively coupled plasma etching; etching depth; high-aspect ratio structure production; inject molding; microelectrical discharge machining; tungsten-based MEMS devices; ultrasonic machining; Etching; Iterative closest point algorithm; Radio frequency; Rough surfaces; Surface roughness; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/MEMSYS.2014.6765687
Filename :
6765687
Link To Document :
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