Title :
A Resistorless CMOS Voltage Reference Based on Mutual Compensation of
and
Author :
Ze-kun Zhou ; Pei-sheng Zhu ; Yue Shi ; Xi Qu ; Hui-ying Wang ; Xiao-min Zhang ; Shi Qiu ; Nie Li ; Chao Gou ; Zhuo Wang ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel temperature-stable nonbandgap voltage reference without resistors is presented in this brief, which is compatible with standard digital CMOS technology. Two linear-temperature terms, i.e., thermal voltage VT and threshold voltage VTH, are utilized to realize a low-temperature-dependent voltage reference with a significant reduction of nonlinear temperature terms. A self-biased threshold-voltage extractor circuit without any resistor is used to obtain the VTH and bias currents of the whole circuit. Based on ratioed transistors biased in a strong inversion region and the inverse-function technique, a temperature-insensitive gain can be applied to the proportional-to-absolute temperature term in the reference, and a weighted sum of VT and VTH is achieved. Experimental results of the proposed voltage reference implemented with a 0.35- μm CMOS process demonstrate that the output of voltage reference is 905.5 mV, a temperature coefficient of 14.8 ppm/°C with a temperature range of 0°C-100 °C is obtained at a 3.3-V power supply, and a power-supply noise attenuation of 61 dB is achieved without any filtering capacitor while dissipating a maximum supply current of 65 μA. The active area is 100 μm ×100 μm.
Keywords :
CMOS digital integrated circuits; compensation; reference circuits; bias currents; digital CMOS technology; inverse-function technique; linear-temperature terms; low-temperature-dependent voltage reference; mutual compensation; nonlinear temperature term reduction; power-supply noise attenuation; proportional-to-absolute temperature term; ratioed transistors; resistorless CMOS voltage reference; self-biased threshold-voltage extractor circuit; size 0.35 mum; strong inversion region; temperature-insensitive gain; temperature-stable nonbandgap voltage reference; thermal voltage; voltage 3.3 V; voltage 905.5 mV; CMOS integrated circuits; MOSFET; Photonic band gap; Resistors; Temperature dependence; Threshold voltage; Complementary metal–oxide–semiconductor voltage reference without resistors; nonbandgap voltage reference; power-supply noise attenuation (PSNA) without a filtering capacitor; strong inversion region; temperature compensation;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2013.2268639